|
2024-04-02 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model:LMBT3906LT1G,Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
3000
|
PCE
|
11.73
|
Importer Name
|
|
2024-04-02 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model: WM02N31M-Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
9000
|
PCE
|
110.97
|
Importer Name
|
|
2024-04-02 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model: AO2301-Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
3000
|
PCE
|
37.53
|
Importer Name
|
|
2024-04-03 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model:SAT33904,Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
51000
|
PCE
|
369.75
|
Importer Name
|
|
2024-04-03 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model:SAMT520V1CN,Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
450000
|
PCE
|
6205.5
|
Importer Name
|
|
2024-04-03 00:00:00
|
85412100
|
I.3.2A#&443200007. Field effect transistor with energy dissipation rate less than 1 W, MOS-P;BSS84;SOT-23;JSCJ, used to produce battery chargers for hand drills. New 100%.
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
6000
|
PCE
|
59.88
|
Importer Name
|
|
2024-04-05 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model:LP2301BLT1G,Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
129000
|
PCE
|
2205.9
|
Importer Name
|
|
2024-04-05 00:00:00
|
85412100
|
AE070#&Transistor, energy dissipation rate less than 1W, assembly components, headphone production, 100% new, model:LP2301BLT1G,Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
120000
|
PCE
|
2052
|
Importer Name
|
|
2024-04-09 00:00:00
|
85412100
|
I.3.1A#&Transistor has an energy dissipation rate of less than 1 W, Trans,NPN,MMBT9013G-I-AE3-R,Ic:500mA,Vceo:20v, SOT-23,SMD, used to produce battery chargers for the device hand drill. New 100%.
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
4
|
PCE
|
0.322
|
Importer Name
|
|
2024-04-09 00:00:00
|
85412100
|
AM048#&Chip-type Transistor, energy dissipation rate less than 1W-Camera manufacturing and assembly components, 100% new, model: L2N7002LT1G-Transistor
|
China
|
CCHQ My Phu Industrial ParkUhyes
|
18000
|
PCE
|
115.2
|
Importer Name
|