Live export data of Vietnam export to japan under the HS code 85419000 via port Long binh export processing zone headquarters, our Vietnam customs export data reports include the date, value, quantity, product description, HS code, port, country, and Vietnam exporters data
Date |
HS Code |
Product Description |
Destination Country |
Custom Name |
QTY. |
Unit |
Value($) |
Exporter Name |
|---|---|---|---|---|---|---|---|---|
|
April 1, 2024 |
85419000 |
F941REV1#&Semiconductor base (in antenna dish) FSX017LG/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion power: 0.1W#&KXD |
Japan | Long Binh Export Processing Zone Headquarters |
258 |
PCE |
299.28 |
Exporter Name |
|
April 2, 2024 |
85419000 |
F918REV#&Electric wave frequency adjustment components-ELM1314-9F/XXX(XXX=100~999)/INTERNAL MATCHED GAAS FET.Conversion capacity: 7.9W#&KXD |
Japan | Long Binh Export Processing Zone Headquarters |
50 |
PCE |
1235.5 |
Exporter Name |
|
April 3, 2024 |
85419000 |
U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD |
Japan | Long Binh Export Processing Zone Headquarters |
2500 |
PCE |
2775 |
Exporter Name |
|
April 3, 2024 |
85419000 |
F941REV2#&Semiconductor substrate that can withstand high voltage (in the antenna dish)-FSX017LGT/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion capacity: 0.1W#&KXĐ |
Japan | Long Binh Export Processing Zone Headquarters |
1000 |
PCE |
1180 |
Exporter Name |
|
April 4, 2024 |
85419000 |
U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD |
Japan | Long Binh Export Processing Zone Headquarters |
2500 |
PCE |
2775 |
Exporter Name |
|
April 8, 2024 |
85419000 |
DM1524#&Lids used in light wave transmission equipment/Lid/HDI649A19 (re-exported according to TKHQ: 106119531560/E11 dated March 6, 2024-item 21)#&JP |
Japan | Long Binh Export Processing Zone Headquarters |
26 |
PCE |
24.96 |
Exporter Name |
|
April 8, 2024 |
85419000 |
DM1506#&Ceramic plate with conductive circuit processing/Substrate/HTR625A321 (re-exported according to TKHQ: 105767452120/E11 dated October 4, 2023-item 31)#&JP |
Japan | Long Binh Export Processing Zone Headquarters |
76 |
PCE |
96.52 |
Exporter Name |
|
April 8, 2024 |
85419000 |
DM1119#&Heat collector plate used in light wave transmission equipment/Thermomodule/HDI563A07 (re-exported according to TKHQ: 105941361040/E11 dated December 7, 2023-item 12)#&JP |
Japan | Long Binh Export Processing Zone Headquarters |
163 |
PCE |
609.62 |
Exporter Name |
|
April 8, 2024 |
85419000 |
DM376REV1#&Metal base used to mount chips used in light wave transmission devices hdi570tz51/case (re-exported according to TKHQ: 106058030630/E11 dated January 30, 2024-item 1)#&JP |
Japan | Long Binh Export Processing Zone Headquarters |
43 |
PCE |
298.85 |
Exporter Name |
|
April 8, 2024 |
85419000 |
DM376REV1#&Metal base used to mount chips used in light wave transmission devices hdi570tz51/case (re-exported according to TKHQ: 106132595330/E11 on March 12, 2024-item 8)#&JP |
Japan | Long Binh Export Processing Zone Headquarters |
1 |
PCE |
6.95 |
Exporter Name |
2024-04-01 00:00:00
F941REV1#&Semiconductor base (in antenna dish) FSX017LG/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion power: 0.1W#&KXD
258
PCE
299.28
2024-04-02 00:00:00
F918REV#&Electric wave frequency adjustment components-ELM1314-9F/XXX(XXX=100~999)/INTERNAL MATCHED GAAS FET.Conversion capacity: 7.9W#&KXD
50
PCE
1235.5
2024-04-03 00:00:00
U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD
2500
PCE
2775
2024-04-03 00:00:00
F941REV2#&Semiconductor substrate that can withstand high voltage (in the antenna dish)-FSX017LGT/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion capacity: 0.1W#&KXĐ
1000
PCE
1180
2024-04-04 00:00:00
U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD
2500
PCE
2775
2024-04-08 00:00:00
DM1524#&Lids used in light wave transmission equipment/Lid/HDI649A19 (re-exported according to TKHQ: 106119531560/E11 dated March 6, 2024-item 21)#&JP
26
PCE
24.96
2024-04-08 00:00:00
DM1506#&Ceramic plate with conductive circuit processing/Substrate/HTR625A321 (re-exported according to TKHQ: 105767452120/E11 dated October 4, 2023-item 31)#&JP
76
PCE
96.52
2024-04-08 00:00:00
DM1119#&Heat collector plate used in light wave transmission equipment/Thermomodule/HDI563A07 (re-exported according to TKHQ: 105941361040/E11 dated December 7, 2023-item 12)#&JP
163
PCE
609.62
2024-04-08 00:00:00
DM376REV1#&Metal base used to mount chips used in light wave transmission devices hdi570tz51/case (re-exported according to TKHQ: 106058030630/E11 dated January 30, 2024-item 1)#&JP
43
PCE
298.85
2024-04-08 00:00:00
DM376REV1#&Metal base used to mount chips used in light wave transmission devices hdi570tz51/case (re-exported according to TKHQ: 106132595330/E11 on March 12, 2024-item 8)#&JP
1
PCE
6.95
